Simulations of Transient Behavior and Parasitic Effects for...

Materials Today: Proceedings 2015 Vol. 2; Iss. 10

Simulations of Transient Behavior and Parasitic Effects for 20nm Gate Length of PD SOI nMOSFET

Rehman, Fida, Jin, Hai-Bo, Li, Jing-Bo, Bukhtiar, Arfan, Khalid, Muhammad, Rizwan, Muhammad, Riaz, Saira, Naseem, Shahzad
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Volume:
2
Year:
2015
Language:
english
Journal:
Materials Today: Proceedings
DOI:
10.1016/j.matpr.2015.11.050
File:
PDF, 425 KB
english, 2015
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