Resistive switching and electrical control of ferromagnetism in a Ag/HfO 2 /Nb:SrTiO 3 /Ag resistive random access memory (RRAM) device at room temperature
Ren, Shaoqing, Zhu, Gengchang, Xie, Jihao, Bu, Jianpei, Qin, Hongwei, Hu, JifanVolume:
28
Language:
english
Journal:
Journal of Physics: Condensed Matter
DOI:
10.1088/0953-8984/28/5/056001
Date:
February, 2016
File:
PDF, 655 KB
english, 2016