Retention behaviour of graphene oxide resistive switching...

International Journal of Nanotechnology 2014 Vol. 11; Iss. 1/2/3/4

Retention behaviour of graphene oxide resistive switching memory

Yuan, Fang, Ye, Yu Ren, Lai, Chao Sung, Wang, Jer Chyi, Zhang, Zhigang, Pan, Liyang, Xu, Jun
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Volume:
11
Year:
2014
Language:
english
Journal:
International Journal of Nanotechnology
DOI:
10.1504/IJNT.2014.059814
File:
PDF, 1.19 MB
english, 2014
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