On the growth conditions of 3–5 μm well-doped...

On the growth conditions of 3–5 μm well-doped AlGaAs/AlAs/GaAs infrared detectors and its relation to the photovoltaic effect studied by transmission electron microscopy

E. Luna, A. Guzmán, A. Trampert, J.L. Sánchez-Rojas, E. Calleja
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Volume:
44
Year:
2003
Language:
english
Pages:
8
DOI:
10.1016/s1350-4495(03)00160-9
File:
PDF, 529 KB
english, 2003
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