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Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO 2 bilayer passivation under gate bias stress
Fan, Ching-Lin, Tseng, Fan-Ping, Li, Bo-Jyun, Lin, Yu-Zuo, Wang, Shea-Jue, Lee, Win-Der, Huang, Bohr-RanVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.02BC17
Date:
February, 2016
File:
PDF, 1.00 MB
english, 2016