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Influence of SiO2 and Si3N4 passivation on AlGaN∕GaN∕Si HEMT performance
Javorka, P., Bernát, J., Fox, A., Marso, M., Lüth, H., Kordoš, P.Volume:
39
Year:
2003
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20030748
File:
PDF, 385 KB
english, 2003