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Effect of Post-Deposition Annealing on the Interface Electronic Structures of Al 2 O 3 -Capped GaN and GaN/AlGaN/GaN Heterostructure
Duan, T. L., Pan, J. S., Ang, D. S.Volume:
4
Year:
2015
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0081509jss
File:
PDF, 766 KB
english, 2015