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Crystallographic tilt and in-plane anisotropies of an a -plane InGaN/GaN layered structure grown by MOCVD on r -plane sapphire using a ZnO buffer
Liu, H F, Liu, W, Guo, S, Chi, D ZVolume:
49
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/49/8/085103
Date:
March, 2016
File:
PDF, 1.63 MB
english, 2016