ALD gate dielectrics for improved threshold voltage...

Semiconductor Science and Technology 2015 / 12 Vol. 30; Iss. 12

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

Ramanan, Narayanan, Lee, Bongmook, Misra, Veena
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Volume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/12/125017
Date:
December, 2015
File:
PDF, 1.61 MB
english, 2015
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