7.6 V Threshold Voltage High-Performance Normally-Off Al...

IEEE Electron Device Letters 2016 / 2 Vol. 37; Iss. 2

7.6 V Threshold Voltage High-Performance Normally-Off Al 2 O 3 /GaN MOSFET Achieved by Interface Charge Engineering

Zhou, Qi, Liu, Li, Zhang, Anbang, Chen, Bowen, Jin, Yang, Shi, Yuanyuan, Wang, Zeheng, Chen, Wanjun, Zhang, Bo
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Volume:
37
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2511026
Date:
February, 2016
File:
PDF, 1.48 MB
english, 2016
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