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Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation
Kim, Seung Hyun, Seok, Tae Jun, Jin, Hyun Soo, Kim, Woo-Byoung, Park, Tae JooVolume:
365
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2016.01.042
Date:
March, 2016
File:
PDF, 1.25 MB
english, 2016