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SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Low-substrate temperature molecular beam epitaxy growth and thermal stability of strained InGaAs/GaAs single-quantum-wells
Elman, Boris S., Koteles, Emil S., Melman, Paul, Rothman, Mark A., Razeghi, ManijehVolume:
1361
Year:
1991
Language:
english
DOI:
10.1117/12.24407
File:
PDF, 478 KB
english, 1991