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Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi 2 with Impurities Grown by Molecular Beam Epitaxy
Kobayashi, Michitaka, Matsumoto, Yuta, Ichikawa, Yoshitake, Tsukada, Dai, Suemasu, TakashiVolume:
1
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.1.051403
Date:
April, 2008
File:
PDF, 285 KB
english, 2008