![](/img/cover-not-exists.png)
Periodic trench region in LDMOS transistor: A new reliable structure with high breakdown voltage
Mehrad, MahsaVolume:
91
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2015.12.041
Date:
March, 2016
File:
PDF, 1.05 MB
english, 2016