Ultrathin oxynitridation process through ion implantation in a poly Si1−xGex gate MOS capacitor
A.P. Jacob, T. Myrberg, M. Friesel, O. Nur, M. Willander, U. Serincan, R. TuranVolume:
6
Year:
2003
Language:
english
Pages:
5
DOI:
10.1016/s1369-8001(03)00069-6
File:
PDF, 242 KB
english, 2003