A New Short Channel MOSFET with an Atomic-Layer-Doped...

Japanese Journal of Applied Physics 1983 / 01 Vol. 22; Iss. S1

A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)

Yamaguchi, Ken, Shiraki, Yasuhiro, Katayama, Yoshifumi, Murayama, Yoshimasa
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Volume:
22
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAPS.22S1.267
Date:
January, 1983
File:
PDF, 530 KB
1983
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