Raman study of the segregation of GaAs/AlAs...

Physica E: Low-dimensional Systems and Nanostructures 2001 Vol. 10; Iss. 4

Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy

G. Zanelato, Yu.A. Pusep, J.C. Galzerani, D.I. Lubyshev, P.P. González-Borrero
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Volume:
10
Year:
2001
Language:
english
Pages:
6
DOI:
10.1016/s1386-9477(00)00289-7
File:
PDF, 96 KB
english, 2001
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