Temperature dependence of the effective mobility edge and...

Physica E: Low-dimensional Systems and Nanostructures 2003 Vol. 17; Iss. none

Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells

C. Rudamas, J. Martı&amp, #x0301, nez-Pastor, L. González, A. Vinattieri, M. Colocci
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Volume:
17
Year:
2003
Language:
english
Pages:
3
DOI:
10.1016/s1386-9477(02)00774-9
File:
PDF, 70 KB
english, 2003
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