On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs
Ralf Granzner, V.M Polyakov, F Schwierz, M Kittler, T DollVolume:
19
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s1386-9477(03)00290-x
File:
PDF, 150 KB
english, 2003