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On the suitability of DD and HD models for the simulation...

On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs

Ralf Granzner, V.M Polyakov, F Schwierz, M Kittler, T Doll
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Volume:
19
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s1386-9477(03)00290-x
File:
PDF, 150 KB
english, 2003
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