Hole mobility enhancement in GaAs/p-Al0.3Ga0.7As QW-HEMT...

Hole mobility enhancement in GaAs/p-Al0.3Ga0.7As QW-HEMT structures with (4 1 1)A super-flat interfaces grown by MBE

Satoshi Hiyamizu, Keisuke Shinohara, Kenji Kasahara, Yasuyuki Shimizu, Satoshi Shimomura, Richard A. Kiehl
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Volume:
2
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s1386-9477(98)00050-2
File:
PDF, 138 KB
english, 1998
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