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A novel low specific on-resistance double-gate LDMOS with multiple buried p-layers in the drift region based on the Silicon-On-Insulator substrate
Chen, Yinhui, Hu, Shengdong, Cheng, Kun, Jiang, YuYu, Luo, Jun, Wang, Jian'an, Tang, Fang, Zhou, Xichuan, Zhou, Jianlin, Gan, PingVolume:
89
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2015.09.037
Date:
January, 2016
File:
PDF, 1.33 MB
english, 2016