InAs FinFETs with Hfin = 20nm fabricated using a top-down...

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IEEE Electron Device Letters 2016

InAs FinFETs with Hfin = 20nm fabricated using a top-down etch process

Oxland, Richard, Li, Xu, Chang, Shang-Wen, Wang, S.-W., Vasen, Tim, Ramvall, Peter, Contreras-Guerrero, Rocio, Rojas-Ramirez, Juan, Holland, Martin, Doornbos, Gerben, Chang, Y.S., Macintyre, Douglas,
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2521001
File:
PDF, 466 KB
english, 2016
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