Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET...

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IEEE Transactions on Electron Devices 2016

Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure

Goh, Kian-Hui, Yadav, Sachin, Low, Kain Lu, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia
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Year:
2016
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2016.2526778
File:
PDF, 2.84 MB
english, 2016
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