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[IEEE 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2013.4.22-2013.4.24)] 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - 6-T SRAM cell design with gate-all-around silicon nanowire MOSFETs
Yi-Bo Liao,, Meng-Hsueh Chiang,, Damrongplasit, N., Liu, Tsu-Jae King, Wei-Chou Hsu,Year:
2013
Language:
english
DOI:
10.1109/VLSI-TSA.2013.6545631
File:
PDF, 644 KB
english, 2013