Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
Hu, Jie, Stoffels, Steve, Lenci, Silvia, Bakeroot, Benoit, De Jaeger, Brice, Van Hove, Marleen, Ronchi, Nicolo, Venegas, Rafael, Liang, Hu, Zhao, Ming, Groeseneken, Guido, Decoutere, StefaanYear:
2016
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2016.2515566
File:
PDF, 5.23 MB
english, 2016