Highly polarized emission from a GaN-based ultraviolet...

Highly polarized emission from a GaN-based ultraviolet light-emitting diode using a Si-subwavelength grating on a SiO2 underlayer

Takashima, Yuusuke, Tanabe, Masato, Haraguchi, Masanobu, Naoi, Yoshiki
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Volume:
369
Language:
english
Journal:
Optics Communications
DOI:
10.1016/j.optcom.2016.02.027
Date:
June, 2016
File:
PDF, 1.68 MB
english, 2016
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