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Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors
Udrea, Florin, Longobardi, Giorgia, Croon, Jeroen, Šonský, Jan, Sque, Stephen, Hurkx, FredVolume:
8
Language:
english
Journal:
IET Power Electronics
DOI:
10.1049/iet-pel.2015.0009
Date:
December, 2015
File:
PDF, 661 KB
english, 2015