Optimization of the parameters of HEMT GaN/AlN/AlGaN...

Semiconductors 2016 / 2 Vol. 50; Iss. 2

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Tikhomirov, V. G., Zemlyakov, V. E., Volkov, V. V., Parnes, Ya. M., Vyuginov, V. N., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Tsatsulnikov, A. F., Cherkashin, N. A., Mizerov, M. N., Ustinov, V.
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Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782616020263
Date:
February, 2016
File:
PDF, 436 KB
english, 2016
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