A 300 V Ultra Low Specific On-Resistance High-Side p-LDMOS...

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IEEE Transactions on Power Electronics 2016

A 300 V Ultra Low Specific On-Resistance High-Side p-LDMOS with Auto-biased n-LDMOS for SPIC

Yi, Bo, Chen, Xing-Bi
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Year:
2016
Language:
english
Journal:
IEEE Transactions on Power Electronics
DOI:
10.1109/tpel.2016.2524024
File:
PDF, 1019 KB
english, 2016
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