Trap states induced by reactive ion etching in AlGaN/GaN...

Chinese Physics B 2015 / 11 Vol. 24; Iss. 11

Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors

Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Hou, Bin, Yang, Xiao-Lei, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue
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Volume:
24
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/24/11/117305
Date:
November, 2015
File:
PDF, 341 KB
english, 2015
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