![](/img/cover-not-exists.png)
Switching mechanism of Al/La 1−x Sr x MnO 3 resistance random access memory. I. Oxygen vacancy formation in perovskites
Lee, Nodo, Lansac, Yves, Hwang, Hyunsang, Jang, Yun HeeVolume:
5
Year:
2015
Language:
english
Journal:
RSC Adv.
DOI:
10.1039/C5RA21982E
File:
PDF, 1.24 MB
english, 2015