Current issues in the physics of heavily doped...

Current issues in the physics of heavily doped semiconductors at the metal-insulator transition

von Lohneysen, H.
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Volume:
356
Language:
english
Journal:
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
DOI:
10.1098/rsta.1998.0154
Date:
January, 1998
File:
PDF, 506 KB
english, 1998
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