Philosophical Transactions Mathematical Physical & Engineering Sciences
1998 / 01 Vol. 356; Iss. 1735
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Current issues in the physics of heavily doped semiconductors at the metal-insulator transition
von Lohneysen, H.Volume:
356
Language:
english
Journal:
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
DOI:
10.1098/rsta.1998.0154
Date:
January, 1998
File:
PDF, 506 KB
english, 1998