Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET
Alper, C, Palestri, P, Padilla, J L, Ionescu, A MVolume:
31
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/4/045001
Date:
April, 2016
File:
PDF, 1.32 MB
english, 2016