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Comparison of Structural and Electrical Properties of Er 2 O 3 and ErTi x O y Charge-Trapping Layers for InGaZnO Thin-Film Transistor Nonvolatile Memory Devices
Pan, Tung-Ming, Chen, Ching-Hung, Hu, Yi-Hsiang, Wang, Hung-Chun, Her, Jim-LongVolume:
37
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2512841
Date:
February, 2016
File:
PDF, 530 KB
english, 2016