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Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP∕GaAs: A Study by the Chemically Sensitive (200) Diffraction
Frigeri, C., Attolini, G., Bosi, M., Pelosi, C., Germini, F.Volume:
156
Year:
2009
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3111028
File:
PDF, 483 KB
english, 2009