A GaN HEMT Structure Allowing Self-terminated, Plasma-free...

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IEEE Electron Device Letters 2016

A GaN HEMT Structure Allowing Self-terminated, Plasma-free Etching for High-uniformity, High-mobility Enhancement-mode Devices

Lin, Shuxun, Wang, Maojun, Sang, Fei, Tao, Ming, Wen, Cheng, Xie, Bing, Yu, Min, Wang, Jinyan, Hao, Yilong, Wu, Wengang, Xu, Jun, Cheng, Kai, Shen, Bo
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2533422
File:
PDF, 977 KB
english, 2016
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