4H-SiC Trench MOSFETs with L Shaped Gate

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IEEE Electron Device Letters 2016

4H-SiC Trench MOSFETs with L Shaped Gate

Song, Qingwen, Yang, Shuai, Tang, Guannan, Han, Chao, Zhang, Yimeng, Tang, Xiaoyan, Zhang, Yimen, Zhang, Yuming
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2533432
File:
PDF, 622 KB
english, 2016
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