Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C–SiC(
Sambonsuge, Shota, Jiao, Sai, Nagasawa, Hiroyuki, Fukidome, Hirokazu, Filimonov, Sergey N., Suemitsu, MakiLanguage:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2016.02.020
Date:
March, 2016
File:
PDF, 359 KB
english, 2016