The structure and band gap design of high Si doping level...

Journal of Solid State Chemistry 2016 / 06 Vol. 238

The structure and band gap design of high Si doping level Ag1−xGa1−xSixSe2 (x=1/2)

Zhang, Shiyan, Mei, Dajiang, Du, Xin, Lin, Zheshuai, Zhong, Junbo, Wu, Yuandong, Xu, Jingli
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Volume:
238
Language:
english
Journal:
Journal of Solid State Chemistry
DOI:
10.1016/j.jssc.2016.03.006
Date:
June, 2016
File:
PDF, 752 KB
english, 2016
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