Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
Palumbo, Felix, Lombardo, Salvatore, Eizenberg, MosheVolume:
56
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.10.009
Date:
January, 2016
File:
PDF, 950 KB
english, 2016