A methodology for projecting SiO2 thick gate oxide reliability on trench power MOSFETs and its application on MOSFETs VGS rating
Efthymiou, E., Rutter, P., Whiteley, P.Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.11.021
Date:
December, 2015
File:
PDF, 2.27 MB
english, 2015