Study of the surface of GaAs after etching in...

Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy

Dunaev, A. V., Murin, D. B., Pivovarenok, S. A.
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Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S106378261602007X
Date:
February, 2016
File:
PDF, 492 KB
english, 2016
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