Improving the Electrostatic Discharge Robustness of a...

IEEE Electron Device Letters 2014 / 10 Vol. 35; Iss. 10

Improving the Electrostatic Discharge Robustness of a Junction Barrier Schottky Diode Using an Embedded p-n-p BJT

Chung-Yu Hung,, Tzu-Cheng Kao,, Jian-Hsing Lee,, Jeng Gong,, Kuo-Hsuan Lo,, Hung-Der Su,, Chih-Fang Haung,
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2014.2350020
Date:
October, 2014
File:
PDF, 597 KB
english, 2014
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