Criteria for Plasmon-Enhanced Electron Drag in Si...

IEEE Electron Device Letters 2015 / 3 Vol. 36; Iss. 3

Criteria for Plasmon-Enhanced Electron Drag in Si Metal–Oxide–Semiconductor Devices

Chen, Ming-Jer, Hsieh, Shang-Hsun, Liao, Yu-Chiao, Chen, Chuan-Li, Tsai, Ming-Fu
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2015.2389261
Date:
March, 2015
File:
PDF, 545 KB
english, 2015
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