Mechanism of Hysteresis for a-IGZO TFT Studied by Changing...

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Mechanism of Hysteresis for a-IGZO TFT Studied by Changing the Gate Voltage Waveform in Measurement

Chen, Yi-Jung, Tai, Ya-Hsiang, Chang, Chun-Yi
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Year:
2016
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2016.2532465
File:
PDF, 2.06 MB
english, 2016
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