High-Gap Nb-AlN-NbN SIS Junctions for Frequency Band...

IEEE Transactions on Terahertz Science and Technology 2016 / 1 Vol. 6; Iss. 1

High-Gap Nb-AlN-NbN SIS Junctions for Frequency Band 790–950 GHz

Khudchenko, Andrey, Baryshev, Andrey M., Rudakov, Kirill I., Dmitriev, Pavel M., Hesper, Ronald, de Jong, Leo, Koshelets, Valery P.
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Volume:
6
Language:
english
Journal:
IEEE Transactions on Terahertz Science and Technology
DOI:
10.1109/tthz.2015.2504783
Date:
January, 2016
File:
PDF, 1.81 MB
english, 2016
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