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[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility

Kuzum, Duygu, Pethe, Abhijit J., Krishnamohan, Tejas, Oshima, Yasuhiro, Sun, Yun, McVittie, Jim P., Pianetta, Piero A., McIntyre, Paul C., Saraswat, Krishna C.
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Year:
2007
Language:
english
DOI:
10.1109/iedm.2007.4419048
File:
PDF, 1.81 MB
english, 2007
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