Gate Reliability Investigation in Normally-off p-type-GaN...

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IEEE Electron Device Letters 2016

Gate Reliability Investigation in Normally-off p-type-GaN cap/AlGaN/GaN HEMTs under Forward Bias Stress

Tapajna, Milan, Hilt, Oliver, Bahat Treidel, Eldad, Wuerfl, Joachim, Kuzmik, Jan
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2016.2535133
File:
PDF, 411 KB
english, 2016
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