[IEEE 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Rohnert Park, CA, USA (2015.10.5-2015.10.8)] 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - A 1kb single-side read 6T sub-threshold SRAM in 180 nm with 530 Hz frequency 3.1 nA total current and 2.4 nA leakage at 0.27 V

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