Bandgap-engineered GaAsSb alloy nanowires for near-infrared...

Semiconductor Science and Technology 2015 / 10 Vol. 30; Iss. 10

Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μ m

Ma, Liang, Zhang, Xuehong, Li, Honglai, Tan, Huang, Yang, Yankun, Xu, Yadan, Hu, Wei, Zhu, Xiaoli, Zhuang, Xiujuan, Pan, Anlian
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Volume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/10/105033
Date:
October, 2015
File:
PDF, 1.25 MB
english, 2015
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